FDFME3N311ZT - MOSFET N-CH 30V 1.8A 6MICROFET

Manufacturer Part Number

FDFME3N311ZT

Internal Part Number

ABC-FDFME3N311ZT

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 30V 1.8A 6MICROFET

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

66112 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have FDFME3N311ZT in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for FDFME3N311ZT. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for FDFME3N311ZT

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FDFME3N311ZT

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 30V 1.8A 6MICROFET

Series : PowerTrench®

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 30V

Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 299 mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 1.4nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 15V

FET Feature : Schottky Diode (Isolated)

Power Dissipation (Max) : 1.4W (Ta)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 6-MicroFET (1.6x1.6)

Package / Case : 6-UFDFN Exposed Pad

Weight : -

Condition : New and original

Documents for FDFME3N311ZT

Datasheets : FDFME3N311ZT.pdf

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