IPT60R080G7XTMA1 - MOSFET N-CH 650V 29A HSOF-8

Manufacturer Part Number

IPT60R080G7XTMA1

Internal Part Number

ABC-IPT60R080G7XTMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 650V 29A HSOF-8

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

201072 Pieces

Reference Price

~~USD 1.86036~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have IPT60R080G7XTMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPT60R080G7XTMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IPT60R080G7XTMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPT60R080G7XTMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 650V 29A HSOF-8

Series : CoolMOS™ G7

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 650V

Current - Continuous Drain (Id) @ 25°C : 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 80 mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id : 4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1640pF @ 400V

FET Feature : -

Power Dissipation (Max) : 167W (Tc)

Operating Temperature : -40°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PG-HSOF-8-2

Package / Case : 8-PowerSFN

Weight : -

Condition : New and original

Documents for IPT60R080G7XTMA1

Datasheets : IPT60R080G7XTMA1.pdf

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