BSP316PE6327T - MOSFET P-CH 100V 0.68A SOT223

Manufacturer Part Number

BSP316PE6327T

Internal Part Number

ABC-BSP316PE6327T

Manufacturer

Infineon Technologies

Brief Description

MOSFET P-CH 100V 0.68A SOT223

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

58945 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have BSP316PE6327T in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BSP316PE6327T. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for BSP316PE6327T

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSP316PE6327T

Manufacturer : Infineon Technologies

Description : MOSFET P-CH 100V 0.68A SOT223

Series : SIPMOS®

Part Status : Obsolete

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 680mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 680mA, 10V

Vgs(th) (Max) @ Id : 2V @ 170µA

Gate Charge (Qg) (Max) @ Vgs : 6.4nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 146pF @ 25V

FET Feature : -

Power Dissipation (Max) : 1.8W (Ta)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PG-SOT223-4

Package / Case : TO-261-4, TO-261AA

Weight : -

Condition : New and original

Documents for BSP316PE6327T

Datasheets : BSP316PE6327T.pdf

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