1N4150W-HE3-18 - DIODE GEN PURP 50V 200MA SOD123

Manufacturer Part Number
Internal Part Number
Brief Description
DIODE GEN PURP 50V 200MA SOD123
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
19254403 Pieces
Reference Price
USD 0.017
Our Price
- (Please contact us for a better price: [email protected])

ABC Semiconductor have 1N4150W-HE3-18 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for 1N4150W-HE3-18. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for 1N4150W-HE3-18

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : 1N4150W-HE3-18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 50V 200MA SOD123
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 200mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : 2.5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SOD-123
Supplier Device Package : SOD-123
Operating Temperature - Junction : -55°C ~ 150°C
Weight : -
Condition : New and original
Related Links : 1N41 , 1N4150W

Documents for 1N4150W-HE3-18

Datasheets : 1N4150W-HE3-18.pdf

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