TRS8E65C,S1Q - DIODE SCHOTTKY 650V 8A TO220-2L

Manufacturer Part Number

TRS8E65C,S1Q

Internal Part Number

ABC-TRS8E65C,S1Q

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

DIODE SCHOTTKY 650V 8A TO220-2L

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

99976 Pieces

Reference Price

~~USD 3.7413~~

Our Price

- (Please contact us for a better price: [email protected])

ABC Semiconductor have TRS8E65C,S1Q in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TRS8E65C,S1Q. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TRS8E65C,S1Q

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TRS8E65C,S1Q

Manufacturer : Toshiba Semiconductor and Storage

Description : DIODE SCHOTTKY 650V 8A TO220-2L

Series : -

Part Status : Active

Diode Type : Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max) : 650V

Current - Average Rectified (Io) : 8A (DC)

Voltage - Forward (Vf) (Max) @ If : 1.7V @ 8A

Speed : No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr) : 0ns

Current - Reverse Leakage @ Vr : 90µA @ 650V

Capacitance @ Vr, F : 44pF @ 650V, 1MHz

Mounting Type : Through Hole

Package / Case : TO-220-2

Supplier Device Package : TO-220-2L

Operating Temperature - Junction : 175°C (Max)

Weight : -

Condition : New and original

Documents for TRS8E65C,S1Q

Datasheets : TRS8E65C,S1Q.pdf

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